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FDD2512
August 2001
FDD2512
150V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.
Features
* 6.7 A, 150 V RDS(ON) = 420 m @ VGS = 10 V RDS(ON) = 470 m @ VGS = 6 V
* Low gate charge (8nC typical) * Fast switching * High performance trench technology for extremely low RDS(ON) .
D
D G S
TO-252
S G
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Power Dissipation
TA=25oC unless otherwise noted
Parameter
Ratings
150 20
(Note 3) (Note 1a) (Note 1) (Note 1a) (Note 1b)
Units
V V A W
6.7 20 42 3.8 1.6 -55 to +175
TJ, TSTG
Operating and Storage Junction Temperature Range
C
Thermal Characteristics
RJC RJA RJA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient
(Note 1) (Note 1a) (Note 1b)
3.5 40 96
C/W C/W C/W
Package Marking and Ordering Information
Device Marking FDD2512 Device FDD2512 Reel Size 13'' Tape width 16mm Quantity 2500 units
2001 Fairchild Semiconductor Corporation
FDD2512 Rev B2(W)
FDD2512
Electrical Characteristics
Symbol
WDSS IAR BVDSS BVDSS TJ IDSS IGSSF IGSSR
TA = 25C unless otherwise noted
Parameter
Drain-Source Avalanche Energy Drain-Source Avalanche Current Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, Forward Gate-Body Leakage, Reverse
(Note 2)
Test Conditions
Single Pulse,VDD = 75 V, ID = 2.2A
Min
Typ
Max Units
90 2.2 mJ A V
Drain-Source Avalanche Ratings (Note 2)
Off Characteristics
VGS = 0 V, ID = 250 A ID = 250 A, Referenced to 25C VDS = 120 V, VGS = 20 V, VGS = -20 V, VGS = 0 V VDS = 0 V VDS = 0 V 2 2.6 -5.6 307 322 606 5 6.5 344 22 9 VDD = 75 V, VGS = 10 V, ID = 1 A, RGEN = 6 6.5 3.5 22 4 VDS = 75 V, VGS = 10 V ID = 2.2 A, 8 1.5 2.3 3.2
(Note 2)
150 147 1 100 -100 4
mV/C A nA nA V mV/C 420 470 870 m
On Characteristics
VGS(th) VGS(th) TJ RDS(on)
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance
(Note 2)
VDS = VGS, ID = 250 A ID = 250 A, Referenced to 25C VGS = 10 V, ID = 2.2 A VGS = 6 V, ID = 2.0 A VGS = 10 V, ID = 2.2 A,TJ = 125C VGS = 10 V, VDS = 10 V VDS = 10 V, VDS = 75 V, f = 1.0 MHz ID = 2.2 A V GS = 0 V,
ID(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS VSD
A S pF pF pF 13 7 33 8 11 ns ns ns ns nC nC nC A V
Dynamic Characteristics
Switching Characteristics
Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
Drain-Source Diode Characteristics and Maximum Ratings
Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VGS = 0 V, IS = 3.2 A 0.8 1.2
Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design.
a) RJA = 40C/W when mounted on a
2 1in pad of 2 oz copper
b) RJA = 96C/W when mounted on a minimum pad.
Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% 3. Maximum current is calculated as:
PD RDS(ON)
where PD is maximum power dissipation at TC = 25C and RDS(on) is at TJ(max) and VGS = 10V. Package current limitation is 21A
FDD2512 Rev B2(W)
FDD2512
Typical Characteristics
8
1.4 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
VGS =10V
ID, DRAIN CURRENT (A)
4.5V
6.0V
6
1.3
4.0V
4
VGS = 4.0V
1.2
1.1
4.5V 5.0V 6.0V 10V
2
1
0 0 2 4 6 8 10 VDS, DRAIN-SOURCE VOLTAGE (V)
0.9 0 1 2 ID, DRAIN CURRENT (A) 3 4
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
0.8
2.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2.2 1.8 1.4 1 0.6 0.2 -50 -25 0 25 50 75 100
o
RDS(ON), ON-RESISTANCE (OHM)
ID = 2.2A VGS = 10V
ID = 1A
0.7
0.6
TA = 125oC
0.5
0.4
0.3
TA = 25oC 125 150 175
0.2 3 4 5 6 7 8 9 10 VGS, GATE TO SOURCE VOLTAGE (V)
TJ, JUNCTION TEMPERATURE ( C)
Figure 3. On-Resistance Variation with Temperature.
8
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
10
VDS = 25V
ID, DRAIN CURRENT (A) 6
TA = -55oC 125oC
IS, REVERSE DRAIN CURRENT (A)
25oC
VGS = 0V
1
TA = 125oC
0.1
4
25oC
0.01
-55oC
0.001
2
0 2 3 4 5 6 VGS, GATE TO SOURCE VOLTAGE (V)
0.0001 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
FDD2512 Rev B2(W)
FDD2512
Typical Characteristics
10 VGS, GATE-SOURCE VOLTAGE (V)
500
ID = 2.2A
8
VDS = 50V
75V
400 CAPACITANCE (pF) CISS 300
f = 1MHz VGS = 0 V
100V
6
4
200
2
100
COSS CRSS
0 0 1 2 3 4 5 6 7 8 9 Qg, GATE CHARGE (nC)
0 0 25 50 75 100 125 150 VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
100 100
Figure 8. Capacitance Characteristics.
P(pk), PEAK TRANSIENT POWER (W)
100s
ID, DRAIN CURRENT (A)
10
RDS(ON) LIMIT
1ms 10ms 100ms 1s 10s DC
80
SINGLE PULSE RJA =96C/W TA = 25C
1
60
0.1 VGS = 10V SINGLE PULSE RJA = 96oC/W TA = 25oC 0.001 0.1 1
40
0.01
20
10
100
1000
0 0.01
0.1
1
10
100
1000
VDS, DRAIN-SOURCE VOLTAGE (V)
t1, TIME (sec)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power Dissipation.
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE
1
D = 0.5 0.2
0.1
0.1 0.05
RJA(t) = r(t) + RJA RJA = 96 C/W P(pk)
0.02
t1 t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2
SINGLE PULSE
0.01
0.01
0.001 0.0001
0.001
0.01
0.1
1
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design.
FDD2512 Rev B2(W)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM
DISCLAIMER
FAST (R) FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM
OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench (R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER (R)
SMART STARTTM STAR*POWERTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM UHCTM UltraFET (R)
VCXTM
STAR*POWER is used under license
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant into support device or system whose failure to perform can the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. H4

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